Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton

Author

De Andrade, Maria Glória Caño ; Martino, João Antonio ; Aoulaiche, Marc ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor

Author_Institution

LSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2012

fDate

6-7 March 2012

Firstpage

69

Lastpage

72

Abstract

The Low-Frequency (LF) noise in Bulk and DTMOS triple-gate FinFETs is experimentally investigated under 60 MeV proton irradiation. Moreover, the important figures of merit for the analog performance such as Early voltage and intrinsic voltage gain will be analyzed. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment.

Keywords

MOSFET; DTMOS triple-gate FinFET; DTMOS triple-gate device; analog performance; intrinsic voltage gain; low-frequency noise behaviour; low-noise RF analog application; proton irradiaton; radiation environment; FinFETs; Logic gates; Low-frequency noise; Performance evaluation; Protons; Radiation effects; Bulk; DTMOS; low-frequency noise; proton irradiation; triple-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193359

Filename

6193359