A 160×160-pixel image sensor for multispectral visible, infrared and terahertz detection

This paper describes the development and characterization of a 160×160-pixels image sensor for the simultaneous detection of visible, infrared and terahertz spectra. The monolithic imager is realized by means of post-processing of CMOS wafers housing the readout integrated circuit (ROIC). Visible pixels are implemented as conventional photodiodes in the ROIC, which contains also the addressing and processing electronics for the infrared and terahertz bands. Infrared and terahertz detectors are based on micro-bolometers and realized during the post-processing fabrication steps. A standard 0.35 μm 2P4M CMOS wafer lot has been fabricated and processed, and single imagers characterized for the three spectral bands. Successful operation has been verified at 50 fps, with more than 100 dB dynamic range in the visible region, a NETD of 60mK in the infrared, and a 63pW NEP for the terahertz, with a total power consumption of 173 mW.