Experimental investigation on direction dependence of Si (100) and Si (110) hole mobility in ultra-thin body pFETs

Author

Kutsuki, Tomohiro ; Shimizu, Ken ; Nomura, Hirotoshi ; Saraya, Takuya ; Hiramoto, Toshihiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

6-7 March 2012

Firstpage

85

Lastpage

88

Abstract

The direction dependence of hole mobility in (100) and (110) UTB pFETs has been investigated experimentally using special test device structures exclusive for the direction dependence measurements. It is found that there is no direction dependence under quantum confinement in (100) UTB pFETs with SOI thickness of 5nm. On the other hand, in (110) UTB pFETs, it is shown that hole mobility superiority in <;110>; to <;100>; decreases at low temperature and in high inversion carrier density.

Keywords

MOSFET; carrier density; elemental semiconductors; hole mobility; quantum confined Stark effect; silicon; silicon-on-insulator; SOI; Si; Si (100) hole mobility; Si (110) hole mobility; UTB pFET; direction dependence measurements; high inversion carrier density; quantum confinement; test device structures; ultra-thin body pFET; Effective mass; FETs; Logic gates; Phonons; Potential well; Scattering; Silicon; UTB MOSFET; hole moblity; phonon scattering; quantum confinement effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193363

Filename

6193363