Charge granularity in single electron transistors with polysilicon gates

Author

Kotekar-Patil, Dharmraj ; Jauerneck, Stefan ; Ruoff, Matthias ; Wharam, David ; Kern, Dieter ; Jehl, Xavier ; Wacquez, Romain ; Sanquer, M.

Author_Institution

Inst. for Appl. Phys., Univ. of Tubingen, Tubingen, Germany

fYear

2012

fDate

6-7 March 2012

Firstpage

89

Lastpage

92

Abstract

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.

Keywords

CMOS integrated circuits; single electron transistors; SET; advanced CMOS technology; charge granularity; clear Coulomb blockade behavior; conductance fluctuations; discretely charged islands; low temperature electron transport measurements; nonlinear regime; polysilicon gates; single electron transistors; Diamond-like carbon; Electric potential; Frequency measurement; Logic gates; Silicon; Temperature measurement; Transconductance; Coulomb blockade; MOSFETs; Single electron transistors; polysilicon charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193364

Filename

6193364