Title :
Charge granularity in single electron transistors with polysilicon gates
Author :
Kotekar-Patil, Dharmraj ; Jauerneck, Stefan ; Ruoff, Matthias ; Wharam, David ; Kern, Dieter ; Jehl, Xavier ; Wacquez, Romain ; Sanquer, M.
Author_Institution :
Inst. for Appl. Phys., Univ. of Tubingen, Tubingen, Germany
Abstract :
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.
Keywords :
CMOS integrated circuits; single electron transistors; SET; advanced CMOS technology; charge granularity; clear Coulomb blockade behavior; conductance fluctuations; discretely charged islands; low temperature electron transport measurements; nonlinear regime; polysilicon gates; single electron transistors; Diamond-like carbon; Electric potential; Frequency measurement; Logic gates; Silicon; Temperature measurement; Transconductance; Coulomb blockade; MOSFETs; Single electron transistors; polysilicon charging;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193364
