Title :
Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling
Author :
Lachaume, R. ; Coignus, J. ; Garros, X. ; Scheiblin, P. ; Muñoz, D. ; Reimbold, G.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for doping dependent defects concentrations for which solar cell performances are maximum. Besides, for low doping levels (ie. low experimental defects values), it is the adjacent ITO contact which governs the front side HJ electrostatics and thus the solar cell performance.
Keywords :
amorphous semiconductors; doping profiles; hydrogen; indium compounds; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; tin compounds; 2D TCAD modeling; HJ electrostatics; ITO; Si:H-ITO; bulk defect Impact; doping dependent defect concentration; heterojunction solar cell; hydrogenated amorphous Si layer; macroscopic electrical characteristic; Doping; Electrostatics; Heterojunctions; Indium tin oxide; Photovoltaic cells; Semiconductor process modeling; Silicon; bulk defects; heterojunction solar cells; hydrogenated amorphous Silicon;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193366
