On extraction of self-heating features in UTBB SOI MOSFETs

Author

Makovejev, S. ; Olsen, S. ; Andrieu, F. ; Poiroux, T. ; Faynot, O. ; Flandre, D. ; Raskin, J. -P ; Kilchytska, V.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK

fYear

2012

fDate

6-7 March 2012

Firstpage

109

Lastpage

112

Abstract

In this work UTBB devices with different BOX thicknesses of 10 and 25 nm are compared in terms of self-heating (SH) effect Different approaches of SH characterisation are assessed. Strengths and weaknesses of every extraction technique when applied to advanced UTBB MOSFETs are discussed. We show that while thermal effects are important even in devices with ultra-thin BOX, the resulting drain current degradation is not severe and is not considerably affected by BOX thickening from 10 to 25 nm. The main SH-related issue is output conductance degradation, which is of great importance for analogue applications.

Keywords

MOSFET; elemental semiconductors; feature extraction; silicon; silicon-on-insulator; SH feature extraction technique; Si; UTBB SOI MOSFET; analogue application; drain current degradation; output conductance degradation; self-heating feature extraction technique; size 10 nm; size 25 nm; thermal effect; ultrathin body BOX technology; ultrathin body buried oxide technology; Degradation; Heating; MOSFETs; Radio frequency; Silicon; Substrates; Thermal resistance; RF characterisation; SOI; UTBB; pulsed I-V; self-heatimg;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193369

Filename

6193369