Title :
Intrinsic gate delay and energy-delay product in junctionless nanowire transistors
Author :
Razavi, Pedram ; Ferain, Isabelle ; Das, Samaresh ; Yu, Ran ; Akhavan, Nima Dehdashti ; Colinge, Jean-Pierre
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
In this paper we investigate two important device metrics, intrinsic gate-delay and energy-delay product of triple-gate junctionless nanowire transistors (JNTs) with gate lengths from 22 nm down to 15 nm, for different channel doping concentrations and compare them with those of triple-gate inversion-mode (EVI) nanowire field-effect transistors. Our study shows although intrinsic gate-delay is larger in junctionless devices compared to those of EVI devices, since the switching energy is smaller in JNTs, energy-delay product is almost identical for both junctionless and IM devices.
Keywords :
field effect transistors; nanowires; IM devices; JNT; channel doping concentrations; device metrics; energy-delay product; intrinsic gate delay; size 15 nm; size 22 nm; switching energy; triple-gate inversion-mode nanowire field-effect transistors; Delay; Doping; Logic gates; MOSFETs; Nanoscale devices; Semiconductor process modeling; Junctionless; Nanowire; energy-delay product; intrinsic delay; multigate transistors;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193373