DocumentCode
1978765
Title
Design of a 10-bit CMOS image sensor based on an 8-bit configurable hold-and-go counter
Author
Baek, Changsun ; Lim, Chaeyeol ; Kim, Daeyun ; Song, Minkyu
Author_Institution
Dept. Semicond. Sci., Dongguk Univ. - Seoul, Seoul, South Korea
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
393
Lastpage
397
Abstract
In this paper, a 320×240 pixel, 80 frame/s CMOS image sensor with a low power dual correlated double sampling (CDS) scheme is presented. A novel 8-bit hold-and-go counter in each column is proposed to obtain a 10-bit resolution. Furthermore, dual CDS and a configurable counter scheme are also discussed to realize efficient power reduction. With these techniques, the digital counter consumes at least 43% and at most 61% less power compared with the column counter type, and the frame rate is approximately 40% faster than the double memories type due to a partial pipeline structure without additional memories. The prototype sensor was fabricated in a Samsung 0.13μm 1P4M CMOS process and used a 4T APS with a pixel pitch of 2.25μm. The measured column fixed pattern noise (FPN) is 0.10 LSB.
Keywords
CMOS image sensors; analogue-digital conversion; counting circuits; 4T APS; CDS scheme; CMOS image sensor; Samsung 1P4M CMOS process; column counter type; column fixed pattern noise measurement; configurable hold-and-go counter; digital counter; double memories type; efficient power reduction; low power dual correlated double sampling scheme; partial pipeline structure; pixel pitch; size 0.13 mum; word length 10 bit; word length 8 bit; CMOS image sensors; Clocks; Image resolution; Noise; Power demand; Radiation detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location
Bordeaux
ISSN
1930-8833
Print_ISBN
978-1-4673-2212-6
Electronic_ISBN
1930-8833
Type
conf
DOI
10.1109/ESSCIRC.2012.6341277
Filename
6341277
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