DocumentCode :
1978784
Title :
Design of a fully integrated CMOS self-testable RF power amplifier using a thermal sensor
Author :
Deltimple, Nathalie ; González, José Luis ; Altet, Josep ; Luque, Yohann ; Kerhervé, Eric
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
398
Lastpage :
401
Abstract :
This paper presents a wideband RF power amplifier (PA) dedicated to 2GHz applications integrating a contact-less temperature sensor that allows on-chip observation and testing of the PA. Indeed, based on the static and dynamic local temperature changes caused by the PA operation, the thermal sensor can sense parameters such as output power or efficiency. This principle is applied to a 65nm CMOS PA with an OCP1 of 21dBm. We demonstrate that the output voltage of the thermal sensor follows the PA efficiency under single tone and multi-tone input signal conditions.
Keywords :
CMOS analogue integrated circuits; power amplifiers; temperature sensors; wideband amplifiers; CMOS PA; PA testing; contact-less temperature sensor; dynamic local temperature; frequency 2 GHz; fully integrated CMOS self-testable RF power amplifier; multitone input signal condition; on-chip observation; output voltage; single tone input signal condition; size 65 nm; static local temperature; thermal sensor; wideband RF power amplifier; Frequency domain analysis; Power amplifiers; Radio frequency; System-on-a-chip; Temperature measurement; Temperature sensors; CMOS Power Amplifiers; RF Built-in Self Test; Thermal Sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341278
Filename :
6341278
Link To Document :
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