DocumentCode
1978878
Title
High Frequency Drain Noise in InAlAs/InGaAs/InP High Electron Mobility Transistors in Impact Ionization Regime
Author
Wang, Hong ; Liu, Yuwei ; Radhakrishnan, K. ; Ng, Geok Ing
fYear
2006
fDate
7-11 May 2006
Firstpage
36
Lastpage
38
Keywords
Degradation; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise measurement; Performance analysis; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634105
Filename
1634105
Link To Document