Numerical simulation and modeling of thermal transient in silicon power devices

The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.