Characteristics control of single electron transistor with floating gate by charge pump circuit

Author

Nozue, Motoki ; Suzuki, Ryota ; Nomura, Hirotoshi ; Saraya, Takuya ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

6-7 March 2012

Firstpage

161

Lastpage

164

Abstract

A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with MOS circuits. By applying high voltage generated by the charge pump circuit to the floating gate SET, the characteristics control of Coulomb blockade oscillation is demonstrated for the first time at room temperature. This attempt will open a new path of adding new functionality to conventional MOS circuits by integration with so-called Beyond CMOS devices.

Keywords

CMOS integrated circuits; charge pump circuits; oscillations; random-access storage; single electron transistors; Coulomb blockade oscillation; MOS integrated circuits; beyond CMOS devices; charge pump circuit; floating gate SET; high voltage generation; nonvolatile memory effect; single electron transistor; temperature 293 K to 298 K; CMOS integrated circuits; Charge pumps; Logic gates; Oscillators; Silicon; Single electron transistors; Temperature; Beyond CMOS; Coulomb blockade oscillation; charge pump circuit; single electron transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193382

Filename

6193382