Title :
Magneto-resistive IC memory limitations and architecture implications
Author :
Scheuerlein, Roy E.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
Magnetoresistive (MR) elements offer an alternative approach to nonvolatile VLSI memory. The approach has unique aspects which are related to the requirements of high speed, high density, deep sub-micron VLSI memory. The limitations of resistor thermal noise, sensing power, write current, switch fan-out, bandwidth, and voltage supply are discussed. Possible MRAM array architectures are listed, and a novel architecture called the cross point magnetic tunnel junction (MTJ) MRAM is described that potentially offers higher signal-to-noise ratio, lower power and higher density than the alternatives. Signal-to-noise ratio (SNR) and power versus bandwidth constraint equations are proposed for MRAM architectures. Sensing alternatives for MR elements are reviewed and voltage requirements of MRAM architectures are described. Finally, MRAM alternatives are compared
Keywords :
VLSI; integrated circuit design; integrated circuit noise; integrated memory circuits; magnetoresistive devices; memory architecture; random-access storage; thermal noise; MR sensing elements; MRAM architecture; MRAM architecture voltage requirements; MRAM array architectures; SNR constraint equations; VLSI memory density; VLSI memory speed; cross point MTJ MRAM; cross point magnetic tunnel junction MRAM; magnetoresistive IC memory; magnetoresistive IC memory architecture; magnetoresistive elements; memory bandwidth; memory density; memory power; nonvolatile VLSI memory; power/bandwidth constraint equations; resistor thermal noise; sensing power; signal-to-noise ratio; switch fan-out; voltage supply; write current; Bandwidth; Magnetic tunneling; Magnetoresistance; Memory architecture; Nonvolatile memory; Resistors; Signal to noise ratio; Switches; Very large scale integration; Voltage;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4518-5
DOI :
10.1109/NVMT.1998.723217
