Title :
Multi-subband semi-classical simulation of n-type Tunnel-FETs
Author :
Revelant, A. ; Palestri, P. ; Selmi, L.
Author_Institution :
DIEGM, Univ. of Udine - IU.NET, Udine, Italy
Abstract :
We present a newly developed model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high-κ dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
Keywords :
Monte Carlo methods; field effect transistors; band-to-band tunneling; carrier confinement; generation rate; multi-subband Monte Carlo transport simulator; multi-subband semiclassical simulation; n-type tunnel FET device; off-equilibrium transport; Logic gates; Mathematical model; Quantization; Silicon; Three dimensional displays; Tunneling;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193389
