Title :
TED control technology for suppression of reverse narrow channel effect in 0.1 /spl mu/m MOS devices
Author :
Ono, A. ; Ueno, R. ; Sakai, I.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
In this paper, it is revealed, for the first-time, that transient enhanced diffusion (TED) causes the reverse narrow channel effect (RNCE), which has been considered as a geometrical effect in the case of shallow trench isolation (STI). We will demonstrate that the RNCE can be suppressed by TED control techniques, including (1) high ramping rate (/spl sim/300/spl deg/C/sec) RTA, (2) a defect-blocking layer containing nitrogen, and (3) post V/sub th/ adjustment I/I.
Keywords :
MOSFET; diffusion; ion implantation; isolation technology; rapid thermal annealing; 0.1 micron; MOS device scaling; RTA; TED control technology; defect-blocking layer; geometrical effect; ion implantation; reverse narrow channel effect; sampling rate; shallow trench isolation; threshold voltage; transient enhanced diffusion; Boron; Circuits; Impurities; Information systems; Isolation technology; MOS devices; National electric code; Nitrogen; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650353
