Title :
10-Gb/s - 120-/spl deg/C operation of 1.3-/spl mu/m AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure
Author :
Tsuruoka, K. ; Kobayashi, R. ; Naniwae, K. ; Tokutome, K. ; Ohsawa, Y. ; Kato, T.
Author_Institution :
NEC Corp., Shiga
Abstract :
We have developed the first 1.3-mum AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure by narrow-stripe selective MOVPE. SIMS measurements revealed that the Ru-doped InP suppressed Zn diffusion from Zn-doped InP in comparison with Fe-doped InP. The LD operates up to 170degC. 10-Gb/s operation up to 120degC and more than 3500-hour reliability under 85-degC APC test has been successfully achieved
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; diffusion; gallium arsenide; indium compounds; quantum well lasers; ruthenium; semiconductor device reliability; vapour phase epitaxial growth; zinc; 1.3 mum; 10 Gbit/s; 120 degC; 170 degC; 3500 hour; 85 degC; AlGaInAs laser; AlGaInAs-InP:Ru; AlGaInAs-InP:Zn; Fabry-Perot laser; Fe-doped InP; Ru-doped InP; SIMS measurements; Zn diffusion; Zn-doped InP; buried heterostructure; laser diode; multiple quantum well laser; narrow-stripe selective MOVPE; reliability; Annealing; Conducting materials; Conductivity; Epitaxial growth; Epitaxial layers; Indium phosphide; Light sources; Quantum well devices; Temperature; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634115
