Title :
ULIS Conference program [table of contents]
Abstract :
The following topics are dealt with: channel and gate stack engineering; graphene and III-V MOSFET; silicon nanowires; disruptive and more than Moore devices; advanced FDSOI CMOS; tunnel FET; and advanced memory concepts and models.
Keywords :
DRAM chips; III-V semiconductors; MOSFET; elemental semiconductors; field effect transistors; graphene; nanowires; silicon; silicon-on-insulator; tunnel transistors; III-V MOSFET; Moore device; ULIS; advanced FDSOI CMOS; advanced memory concept; gate stack engineering; graphene; silicon nanowires; tunnel FET; ultimate integration on silicon;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193397
