DocumentCode :
1979208
Title :
High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD
Author :
Oda, Yasuhiro ; Kurishima, Kenji ; Watanabe, Noriyuki ; Uchida, Masahiro ; Kobayashi, Takashi
fYear :
2006
fDate :
7-11 May 2006
Firstpage :
92
Lastpage :
95
Keywords :
Acceleration; Composite materials; Electron emission; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; MOCVD; Photonics; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN :
0-7803-9558-1
Type :
conf
DOI :
10.1109/ICIPRM.2006.1634119
Filename :
1634119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1979208
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