DocumentCode
1979208
Title
High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD
Author
Oda, Yasuhiro ; Kurishima, Kenji ; Watanabe, Noriyuki ; Uchida, Masahiro ; Kobayashi, Takashi
fYear
2006
fDate
7-11 May 2006
Firstpage
92
Lastpage
95
Keywords
Acceleration; Composite materials; Electron emission; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; MOCVD; Photonics; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634119
Filename
1634119
Link To Document