Title :
Design of Power Amplifiers Using Stacked Topology
Author :
Shen, Chih-Chun ; Huang, Fan-Hsiu ; Liang, Kung-Hao ; Chang, Hong-Yeh ; Chan, Yi-Jen ; Vendelin, George D.
Author_Institution :
Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.
Keywords :
heterojunction bipolar transistors; network topology; power amplifiers; base capacitor termination; frequency 1 GHz; heterojunction bipolar transistors; interstage matching; power amplifier design; stacked transistor topology; Capacitors; Heterojunction bipolar transistors; Inductors; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Stability; Topology; HBT; component; power amplifier; stacked topology;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4554963
