Title :
InGaAs/InP DHBTs with a 75nm Collector, 20nm base Demonstrating 544 GHz ft, BVCEO = 3.2V, and BVCBO = 3.4V
Author :
Griffith, Zach ; Rodwell, Mark J. W. ; Xiao-Ming Fang ; Loubychev, Dmitri ; Ying Wu ; Fastenau, Joel M. ; Liu, Amy W. K.
Keywords :
Bandwidth; Circuits; Conductivity; Current density; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634120
