DocumentCode :
1979272
Title :
Effect of TiO2 dense film prepared by long-throw RF sputtering on the performance of dye-sensitized solar cell
Author :
Abdullah, Mohd Harun ; Rusop, M.
Author_Institution :
NANO-Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear :
2013
fDate :
19-20 Aug. 2013
Firstpage :
178
Lastpage :
182
Abstract :
Graded index TiO2 dense film that can improve transmittance is employed at the interface between the indium-tin-oxide (ITO) and nanocrystalline-TiO2 by radio-frequency magnetron sputtering. The employment of the d-TiO2 film in the dye sensitized solar cell was investigated by means of optical properties (UV-absorption and transmittance spectra) and open-circuit voltage decay (OCVD). The blue-shift of the UV-absorption spectra and lower series resistance value of the dry cell implied the decrease of the charge interfacial resistance, and thus facilitating the charge transport from the nanocrystalline-TiO2 to the ITO. Furthermore, the higher conversion efficiency of about 4.38%, representing almost 53% increment compared to bare ITO cell is mainly due to the effectiveness of blocking effect and better spectral management across the interfaces in the DSSC. These integrated features became desirable traits brought about by the application of the ITO/d-TiO2 for use in dense film-based DSSC applications. This work also provides the fundamental insight of the dense film that determines the origin of such improvement in the DSSC performance.
Keywords :
indium compounds; solar cells; sputtering; titanium compounds; ITO; ITO cell; TiO2; UV absorption; dye-sensitized solar cell; indium-tin-oxide interface; long throw RF sputtering; radiofrequency magnetron sputtering; titanium dioxide dense film; transmittance spectra; Decision support systems; Films; Glass; Indium tin oxide; Photovoltaic cells; Sputtering; Substrates; Blue-shift; Charge transfer; Open-circuit voltage decay; Recombination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Engineering and Technology (ICSET), 2013 IEEE 3rd International Conference on
Conference_Location :
Shah Alam
Print_ISBN :
978-1-4799-1028-1
Type :
conf
DOI :
10.1109/ICSEngT.2013.6650166
Filename :
6650166
Link To Document :
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