High Performance P-doped InAs Tunnel Injection Quantum Dash Lasers on InP

Author

Mi, Z. ; Yang, J. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI

fYear

0

fDate

0-0 0

Firstpage

112

Lastpage

115

Abstract

We have investigated the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~ 50 meV) are measured from multiple InAs quantum dash layers grown under optimized conditions. The lasers are characterized by very large T₀ (204 K), large modulation bandwidth (f_-3B = 12 GHz), and near-zero alpha-parameter and very low chirp (~ 0.3 Aring)

Keywords

III-V semiconductors; chirp modulation; indium compounds; molecular beam epitaxial growth; optical modulation; photoluminescence; quantum dot lasers; semiconductor doping; semiconductor growth; spectral line narrowing; 12 GHz; 204 K; InAs; InAs tunnel injection quantum dash lasers; InP; InP substrates; modulation bandwidth; molecular beam epitaxial growth; narrow linewidth; p-doping; photoluminescence; Bandwidth; Chirp modulation; Indium phosphide; Laser theory; Molecular beam epitaxial growth; Potential well; Quantum dot lasers; Quantum dots; Quantum well lasers; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634124

Filename

1634124