Title :
Low Linewidth Enhancement Factor (αH ~ 0.5) of 9- Layer InAs/InP Quantum Dash Lasers Emitting at 1.55 μm
Author :
Moreau, Guillaume ; Merghem, K. ; Martinez, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution :
LPN CNRS, Marcoussis
Abstract :
In this work we report on the growth of high modal gain laser structures containing 9 InAs/InGaAsP quantum dash layers. Single mode ridge waveguide lasers demonstrate record low values of the linewidth enhancement factor (alpha ~ 0.5) below threshold current
Keywords :
III-V semiconductors; indium compounds; laser modes; laser stability; quantum dot lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.55 mum; InAs-InGaAsP; InAs/InP quantum dash lasers; linewidth enhancement factor; modal gain; ridge waveguide lasers; Indium phosphide; Laser excitation; Laser feedback; Laser mode locking; Laser modes; Quantum dot lasers; Quantum dots; Stationary state; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634125
