DocumentCode
1979330
Title
High Voltage Operation of Power GaAs FET Amplifiers
Author
Vavken, Werner ; Hsieh, Chi
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
621
Lastpage
624
Abstract
This paper describes a 7 GHz GaAs FET power amplifier operating with -2lV D.C. power supply without DC-DC converter or voltage dropping resistor. The amplifier is to be used as a direct replacement of an Injection Locked Amplifier in a 7 GHz video microwave radio. Direct series connection of two power GaAs FETs is used to achieve a high voltage operating condition, the details of circuit design and amplifier performance is presented.
Keywords
DC-DC power converters; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Operational amplifiers; Power amplifiers; Power supplies; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332881
Filename
4131555
Link To Document