Title :
An 8-12 GHz 1 Watt GaAs FET Amplifier for TWT Replacement
Author :
Arai, Youichi ; Sakane, T. ; Aono, Y. ; Sugawara, H.
Author_Institution :
Transmission Systems Laboratory, Fujitsu Laboratories, Kawasaki, Japan.
Abstract :
A high gain broad-band GaAs FET power amplifier was developed for TWT replacement. The amplifier outputs 1 watt at the 1 dB gain compression point, and has a gain of more than 50 dB over the operating frequency range from 8 to 12 GHz. Designing a high power GaAs FET amplifier with broad-band is very difficult due to the very low input impedance of high power GaAs FETs. Computer simulation was used to investigate bandwidth limitations of a high power amplifier which used high power GaAs FETs. The simulation made it possible to obtain the difference between the maximum available gain of FETs and the gain of a broad-band amplifier operating at 8 to 12 GHz. The results were used to choose the FETs for this amplifier.
Keywords :
Bandwidth; Circuits; FETs; Frequency; Gain measurement; Gallium arsenide; High power amplifiers; Laboratories; Power measurement; Scattering parameters;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332882
