Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers

Author

Kapre, R.M. ; Tsang, W.T. ; Chen, Y.K. ; Wu, Ming C. ; Chin, M.A.

Author_Institution

AT&T Bell laboratories, Murray Hill, NJ

fYear

1992

fDate

8-11 Jun 1992

Firstpage

201

Lastpage

202

Keywords

Chemical lasers; Diode lasers; Epitaxial growth; Gallium arsenide; Laser beams; Lattices; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

DOI

10.1109/MOVPE.1992.665017

Filename

665017

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