Title :
Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers
Author :
Kapre, R.M. ; Tsang, W.T. ; Chen, Y.K. ; Wu, Ming C. ; Chin, M.A.
Author_Institution :
AT&T Bell laboratories, Murray Hill, NJ
Keywords :
Chemical lasers; Diode lasers; Epitaxial growth; Gallium arsenide; Laser beams; Lattices; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.665017
