Buried ridge stripe lasers using InAs/InP (100) quantum dashes based active layer: a step towards low noise sources for high-speed direct modulation

Author

Lelarge, F. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; Le Gouezigou, L. ; Pommereau, F. ; Accard, A. ; Make, D. ; Le Gouezigou, O. ; Landreau, J. ; Provost, J.G. ; Van-Dijk, F. ; Renaudier, J. ; Duan, G.H. ; Dagens, B.

Author_Institution

Alcatel Thales III-V Lab., Marcoussis

fYear

0

fDate

0-0 0

Firstpage

127

Lastpage

130

Abstract

We investigate the devices performances of InAs/InP (100) quantum dash buried stripe ridge lasers. We demonstrate high-gain quantum dash based lasers whose dynamic properties are compatible with high-speed devices requirements. The good temperature characteristic of such lasers allows 10 Gb/s direct modulation in the temperature range of 25-75degC. The mode-beating RF spectrum of passively locked FP quantum dashes laser shows a very narrow spectral linewidth (50 kHz) attributed to a strong phase correlation between modes

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; laser mode locking; laser noise; optical modulation; quantum dot lasers; spectral line breadth; 10 Gbit/s; 25 to 75 degC; Fabry-Perot laser; InAs-InP; InAs/InP (100) quantum dashes; RF spectrum; buried ridge stripe lasers; direct modulation; high-gain lasers; high-speed modulation; low noise sources; mode-beating spectrum; narrow spectral linewidth; passively locked laser; phase correlation; quantum dash lasers; self-organized quantum dots; Active noise reduction; Distributed feedback devices; Indium phosphide; Laser feedback; Laser mode locking; Laser noise; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634128

Filename

1634128