DocumentCode
1979410
Title
Novel Measurement Technique Allows Full Two-Port Characterisation of GaAs Power MESFETs
Author
Soares, Robert ; Goudelis, Michel ; de Los Reyes Davo, Elias
Author_Institution
CNET-LANNION B - DIVISION MER-MLS - 22301 LANNION - FRANCE
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
635
Lastpage
639
Abstract
An original measurement technique has been developed which permits full two-port characterisation of GaAs power MESFETs under non-linear signal drive conditions. Measurement results are presented showing the variation across C-band of each of the device two-port parameters with signal drive level, and their dependance on the transistor terminal loads. Results derived by this technique correlate well with those measured by the load-pull method.
Keywords
Current measurement; Gain measurement; Gallium arsenide; MESFETs; Measurement techniques; Power measurement; Reflection; Signal analysis; Testing; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332773
Filename
4131558
Link To Document