Title :
Recent research results on deep level defects in semi-insulating InP-application to improve material quality
Author :
Zhao, Youwen ; Dong, Zhiyuan ; Dong, Hongwei ; Sun, Niefeng ; Sun, Tongnian
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented
Keywords :
III-V semiconductors; deep levels; indium compounds; vacancies (crystal); apparent defect suppression effect; deep level defects; material quality; quality improvement; semiinsulating InP materials; semiinsulating InP-application; Annealing; Conductivity; Hall effect; Indium phosphide; Semiconductor materials; Substrates; Sun; Temperature; Thermal resistance; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634131
