Title :
The Design of Schottky Diodes for Microwave Regime
Author :
Gradinaru, Gh. ; Dorobantu, A.N.
Author_Institution :
Research Institute for Electronic Components (ICCE), Str. Erou Iancu Nicolae 32B, 72996 Bucharest, ROMANIA.
Abstract :
A general method is presented to design microwave Schottky diodes for detection and mixing, based on correlations between imposed microwave electrical parameters and structural elements in various polarization and frequency regimes. Computer-drawn families of curves yield directly these correlations, promising a rapid choice of design parameters for any type of Si and GaAs Schottky diode.
Keywords :
Current-voltage characteristics; Frequency; Gallium arsenide; Microwave theory and techniques; Noise level; Schottky barriers; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332777
