Title :
New Microwave Detector Employing Nb/GaAs Super-Schottky Contact
Author :
Kataoka, S. ; Sugiyama, Y. ; Tacano, M. ; Sakai, S. ; Komamiya, Y.
Abstract :
A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a long life and very reliable characteristics with estimated detector current responsivity S¿1500 V¿1 and NEP ¿ 1.2 × 10¿15 w/¿HZ at 4.2 K under optimum bias conditions.
Keywords :
Detectors; Gallium arsenide; Niobium; Schottky diodes; Semiconductor device measurement; Semiconductor diodes; Superconducting devices; Superconducting films; Superconducting microwave devices; Superconducting transition temperature;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332778
