SPICE-based approach for magnetic memory simulation

Author

Kostrov, Alexander ; Stempitsky, Viktor

fYear

2009

fDate

22-24 April 2009

Firstpage

56

Lastpage

57

Abstract

Original approach to MRAM I-V characteristics simulation by using SPICE-like simulator was presented. An electrical macromodel of MRAM cell based of spin dependent transport tunneling processes in ferromagnetic/insulator/semiconductor nanostructures accounting for defects in the insulator and at its interfaces was realized within Verilog-AMS computer language and used for simulation of the memory devices with CAD software.

Keywords

MRAM devices; SPICE; cellular arrays; hardware description languages; magnetic tunnelling; magnetoelectronics; nanoelectronics; nanostructured materials; semiconductor device models; CAD software; MRAM I-V characteristics; MRAM cell electrical macromodel; SPICE-based approach; Verilog-AMS computer language; ferromagnetic nanostructure; insulator nanostructure; magnetic memory simulation; semiconductor nanostructure; spin dependent transport tunneling process; Capacitance; Computational modeling; Dielectrics and electrical insulation; Equivalent circuits; Hardware design languages; Magnetic memory; Magnetic tunneling; Semiconductor nanostructures; Substrates; Surface resistance; MRAM; Verilog-AMS; macromodel; magnetic tunnel junction; spintronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Perspective Technologies and Methods in MEMS Design, 2009. MEMSTECH 2009. 2009 5th International Conference on

Conference_Location

Zakarpattya

Print_ISBN

978-966-2191-06-6

Type

conf

Filename

5069703