Characterization of HVPE-grown thick GaAs structures for IR and THz generation

Author

Lynch, C. ; Bliss, D. ; Zens, T. ; Weyburne, D. ; Jimenez, J. ; Avella, M. ; Kuo, P.S. ; Yu, X.

Author_Institution

Air Force Res. Lab., Hanscom AFB, MA

fYear

0

fDate

0-0 0

Firstpage

151

Lastpage

154

Abstract

In a previous paper, we described a method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low pressure hydride vapor phase epitaxy. The low pressure method allows for rapid growth at rates well above 100 mum/hr and layers up to 1 mm thick have been successfully produced. In this paper we present characterization of these layers by optical microscopy, Hall measurement, and cathodoluminescence imaging. We demonstrate growth of low free carrier concentration, mm-thick orientation-patterned GaAs for efficient nonlinear optical conversion

Keywords

Hall effect; III-V semiconductors; carrier density; cathodoluminescence; gallium arsenide; lithography; nonlinear optics; optical microscopy; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs; HVPE-grown thick GaAs structures; Hall measurement; IR generation; THz generation; cathodoluminescence imaging; epitaxial layers; free carrier concentration; lithography; low pressure HVPE; low pressure hydride vapor phase epitaxy; mm-thick orientation-patterned GaAs; nonlinear optical conversion; optical microscopy; orientation-patterned wafers; Character generation; Epitaxial growth; Gallium arsenide; Gratings; Molecular beam epitaxial growth; Nonlinear optics; Optical harmonic generation; Optical modulation; Optical pumping; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634134

Filename

1634134