Title :
Uniformly Ion Implantation for GaAs FETs - Relation to Material and Processing Variabies
Author :
Leigh, P.A. ; McIntyre, N
Author_Institution :
British Telecom Research Laboratories, Martlesham Heath, Ipswich, Suffolk, UK, IP5 7RE
Abstract :
Uniformly ion implanted semi-insulating wafers of gallium arsenide are desirable if the material is ever to be used for high yield integrated circuit manufacture. In this work an established implantation and device technology is described. Careful measurements and characterisation of implanted samples from different suppliers relate material properties to electrical measurements of sheet carrier concentration, mobility and profiles. Variations in processing procedure and material are then related to FET device parameters using both DC and RF characterisation.
Keywords :
Electric variables measurement; FETs; Gallium arsenide; Integrated circuit manufacture; Integrated circuit measurements; Integrated circuit technology; Integrated circuit yield; Ion implantation; Material properties; Sheet materials;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332780
