DocumentCode
1979594
Title
A Novel Noise Model for Submicrometer Gate FET´s
Author
Carnez, B. ; Cappy, A. ; Salmer, G. ; Constant, E.
Author_Institution
Centre Hyperfréquences et Semiconducteurs, L.A. C.N.R.S. n° 287 et GRECO Microondes. Université des Sciences et Techniques de Lille I. 59655 Villeneuve d´´Ascq Cedex (France).
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
685
Lastpage
689
Abstract
A novel noise model for submicrometer gate FET´s is described: it takes into account the non stationnary electron dynamics effects. It allows us to evaluate the intrinsic and extrinsic FET noise figure and to give some informations about the origin of noise in MESFET. A comparison between theoretical predictions and experimental results is given. The noise figure dependence upon the gate length, the gate to source voltage and the parasitic elements are also precised.
Keywords
Circuit noise; Electrons; Equations; Fluctuations; MESFETs; Microwave FETs; Noise figure; Semiconductor device noise; Steady-state; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332782
Filename
4131567
Link To Document