Cathodoluminescence characterization of InP based photonic structures made by dry etching

Author

Avella, M. ; Pommereau, F. ; Jiménez, J. ; Landesman, J.P. ; Liu, B. ; Rhallabi, A.

Author_Institution

Fisica Materia Condensada, Valladolid

fYear

0

fDate

0-0 0

Firstpage

159

Lastpage

162

Abstract

Several structures produced by dry etching of InP substrates are studied. RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma) dry etching procedures were compared. The characterization was carried out by spectrum imaging Cathodoluminescence (CL). The main changes induced by both procedures in the InP substrates were studied. In particular, the creation of defects and the generation of residual stress were analysed

Keywords

III-V semiconductors; cathodoluminescence; indium compounds; internal stresses; photonic crystals; plasma materials processing; sputter etching; substrates; vacancies (crystal); ICP; InP; InP based photonic structures; InP substrates; RIE; cathodoluminescence; defect creation; dry etching; inductively coupled plasma; reactive ion etching; residual stress; spectrum imaging cathodoluminescence; Dry etching; Indium phosphide; Optical refraction; Personal communication networks; Photonic band gap; Photonic crystals; Plasma applications; Radiative recombination; Scanning electron microscopy; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634136

Filename

1634136