• DocumentCode
    1979604
  • Title

    4 GHz Band FET Amplifier with the Noise Temperature of 55K at --50°C

  • Author

    Nakazawa, T. ; Ogiso, K. ; Takeda, F. ; Miyazaki, S. ; Nara, A.

  • Author_Institution
    MITSUBISHI ELECTRIC CORPORATION, 325 Kamimachiya, Kamakura City, Kanagawa Prefecture, Japan 247
  • fYear
    1980
  • fDate
    8-12 Sept. 1980
  • Firstpage
    690
  • Lastpage
    694
  • Abstract
    Thermoelectrically cooled 4 GHz band FET amplifier with noise temperature of 55K has been developed for low noise amplifier of satellite communications earth stations. In this amplifier with the FET which was developed in our company, the new design method of broadband noise matching is applied. The difference between maximum and minimum noise temperature within the frequency band of this amplifier is 3K and is coincident with theoretical value.
  • Keywords
    Broadband amplifiers; Circuit noise; Design methodology; FETs; Frequency; Low-noise amplifiers; Satellite communication; Satellite ground stations; Temperature; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1980. 10th European
  • Conference_Location
    Warszawa, Poland
  • Type

    conf

  • DOI
    10.1109/EUMA.1980.332783
  • Filename
    4131568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979604