DocumentCode
1979631
Title
Characteristics of Low-Noise GaAs Mesfets from 300K to 20K
Author
Weinreb, S. ; Brookes, T.M.
Author_Institution
National Radio Astronomy Observatory, Charlottesville, Va., 22903.
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
695
Lastpage
699
Abstract
Measurements of the noise temperature and transconductance of a GaAs field-effect transistor at temperatures of 300K and 17K are reported as a function of drain current. These results are compared with theory and the contributions of various noise mechanisms to the total noise temperature are presented.
Keywords
Current measurement; Extraterrestrial measurements; Gallium arsenide; MESFETs; Noise figure; Noise generators; Noise measurement; Temperature measurement; Thermal resistance; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332784
Filename
4131569
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