DocumentCode
1979655
Title
50-50Ω Packaged GaAs FET for X and Ku Bands
Author
Derewonko, H.
Author_Institution
THOMSON CSF - ORSAY (France)
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
705
Lastpage
708
Abstract
Everyone knows how difficult it is to use packaged FETS above 8 GHz. Parasitic reaction, increased input-output VSWR and matching circuit losses reduce stability, power gain, output power and bandwidth. Medium power FETs internally matched and self biased with lumped elements in X and Ku bands are presented with 50, 100 and 500 mW of output power.
Keywords
Bandwidth; Capacitors; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Packaging; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332786
Filename
4131571
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