DocumentCode
1979677
Title
Broad-Band Tunable GaAs-FET Oscillator with Hybrid-Coupled Microstrip and Evanescent-Mode Resonators
Author
Jacob, A. ; Knöchel, R.
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
709
Lastpage
713
Abstract
An integrated GaAs-FET oscillator has been developed which provides inexpensive tuning of the oscillation frequency over a frequency range of 950 MHz with little power variation and good efficiency around 8 GHz. This was achieved by coupling the microstrip-mounted FET to an evanescent-mode cavity, which is part of the microstrip box. In a modified version, a varactor diode has been mounted into such an oscillator, permitting additional electronic tuning over 1 GHz around 6 GHz.
Keywords
Apertures; Circuit optimization; Coupling circuits; FETs; Fasteners; Frequency; Microstrip resonators; Oscillators; Power generation; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332787
Filename
4131572
Link To Document