• DocumentCode
    1979733
  • Title

    Antimonide based Quantum Well Transistors for High Speed, Low Power Logic Applications

  • Author

    Datta, Suman

  • Author_Institution
    Components Res., Intel Corp., Hillsboro, OR
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    174
  • Lastpage
    176
  • Abstract
    We have recently demonstrated indium antimonide based quantum well field effect transistors with 85 nm physical gate length. Enhancement mode n-channel InSb quantum well transistors (QWFETs) exhibit unity gain cutoff frequency, exceeding 300 GHz at an operating voltage of only 0.5 V VDS. The InSb quantum well transistors demonstrate 50% higher intrinsic speed, than silicon NMOS transistors while consuming 10 times less active DC power
  • Keywords
    III-V semiconductors; field effect transistors; indium compounds; quantum well devices; 85 nm; InSb; enhancement mode; indium antimonide; quantum well field effect transistors; quantum well transistors; unity gain cutoff frequency; Etching; FETs; Frequency; Gallium arsenide; High-K gate dielectrics; Indium; Leakage current; Logic devices; Photonic band gap; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634141
  • Filename
    1634141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979733