• DocumentCode
    1979792
  • Title

    50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications

  • Author

    Thayne, Iain ; Elgaid, Khaled ; Holland, Martin ; McLelland, Helen ; Moran, David ; Thoms, Stephen ; Stanley, Colin

  • Author_Institution
    Nanoelectron. Res. Centre, Glasgow Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 muW/mu demonstrating fT of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 muW) radio transceivers for autonomous distributed sensor network applications
  • Keywords
    III-V semiconductors; MMIC; distributed sensors; gallium arsenide; high electron mobility transistors; transceivers; 30 to 400 GHz; 50 nm; GaAs; GaAs mHEMT; MMIC; distributed sensor; metamorphic HEMT; radio transceivers; Batteries; CMOS technology; Energy consumption; Frequency; Gallium arsenide; MMICs; Optical sensors; Radio transceivers; Temperature sensors; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634143
  • Filename
    1634143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979792