Title :
50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications
Author :
Thayne, Iain ; Elgaid, Khaled ; Holland, Martin ; McLelland, Helen ; Moran, David ; Thoms, Stephen ; Stanley, Colin
Author_Institution :
Nanoelectron. Res. Centre, Glasgow Univ.
Abstract :
We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 muW/mu demonstrating fT of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 muW) radio transceivers for autonomous distributed sensor network applications
Keywords :
III-V semiconductors; MMIC; distributed sensors; gallium arsenide; high electron mobility transistors; transceivers; 30 to 400 GHz; 50 nm; GaAs; GaAs mHEMT; MMIC; distributed sensor; metamorphic HEMT; radio transceivers; Batteries; CMOS technology; Energy consumption; Frequency; Gallium arsenide; MMICs; Optical sensors; Radio transceivers; Temperature sensors; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634143
