DocumentCode
1979810
Title
Self-heating effects in AlGaN/GaN high-power HEMTs
Author
Zhang, A.P. ; Rowland, L.B. ; Kaminsky, E.B. ; Tilak, V. ; Allen, A.F. ; Edward, B.J.
Author_Institution
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
15
Lastpage
16
Abstract
In this paper, self-heating effects are more pronounced in high-power AlGaN/GaN HEMTs, which have demonstrated more than 10 times power densities. The elevated junction temperature caused by the self-heating effects degrade the available drain current and subsequently the output power due to reduced electron saturation velocity and low-field mobility.
Keywords
aluminium compounds; electron mobility; finite element analysis; gallium compounds; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN high-power HEMTs; drain current; electron mobility; electron saturation velocity; elevated junction temperature; power densities; self-heating effects; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Packaging; Phased arrays; Power generation; Power measurement; Pulse measurements; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226850
Filename
1226850
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