DocumentCode
1979824
Title
The use of Baritt Diodes in Self-Oscillating Mixers
Author
Kassab, Z.N. ; Webb, P.W.
Author_Institution
Department of Electronic and Electrical Engineering, University of Birmingham, P.O.Box 363, Birmingham B15 2TT, U.K.
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
742
Lastpage
745
Abstract
Baritt diodes were used to construct single sideband X and C - band waveguide mixers which gave conversion gain up to an IF frequency of 200 MHz. Within this band gain variation of 4 to 6 dB and noise figures of 11 to 14 dB were measured. The microwave circuit could also be used as a reflection amplifier and gave gains of >8 dB over a 300 MHz bandwidth, with noise figures in the range 8 ¿ 10 dB. It was clear that in the mixer the Baritt diode was functioning as a small signal amplifier, mixer and large signal oscillator. A model for the Baritt diode was developed which considered the effects of space charge, a variable plane for charge injection and velocity modulation in the drift region. In particular the effects of the temperature were studied and a thermovision microscope used to measure the temperature of the diode.
Keywords
Acoustic reflection; Diodes; Frequency conversion; Gain measurement; Microwave amplifiers; Microwave circuits; Mixers; Noise figure; Noise measurement; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332793
Filename
4131578
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