DocumentCode :
1979825
Title :
Monolithic integration of a class DE inverter for on-chip resonant DC-DC converters
Author :
Callemeyn, Piet ; Steyaert, Michiel
Author_Institution :
ESAT-MICAS, KU Leuven, Leuven, Belgium
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
325
Lastpage :
328
Abstract :
A fully-integrated series resonant class DE inverter is realized in a 130 nm 1.2 V CMOS technology with an on-chip spiral inductor and an integrated MIMcap. It is used as the first stage in fully-integrated class DE DC-DC resonant converters. The inherent soft switching yields high conversion efficiency at high switching frequencies. Low switching peak-voltages are present in the circuit, alleviating the need for on-chip high-voltage techniques. The use of on-chip passives reduces the bill of materials (BOM) considerably. The maximum output power of the series resonant class DE inverter is 11.6 mW. The maximum power efficiency is 65.2 %. The measurement results confirm and improve previous simulations.
Keywords :
CMOS integrated circuits; DC-DC power convertors; inductors; monolithic integrated circuits; resonant invertors; resonant power convertors; switching convertors; BOM; CMOS technology; bill of materials reduction; efficiency 65.2 percent; fully-integrated series resonant class DE inverter; high conversion efficiency; integrated MIMcap; low switching peak-voltages; monolithic integration; on-chip high-voltage techniques; on-chip passives; on-chip resonant dc-dc converters; on-chip spiral inductor; power 11.6 mW; size 130 nm; soft switching; voltage 1.2 V; Resonant frequency; Resonant inverters; Switches; Switching frequency; Switching loss; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341320
Filename :
6341320
Link To Document :
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