Title :
Ka-band CW power performance by AlGaN/GaN HEMTs on SiC
Author :
Lee, C. ; Jinwei Yang ; Asif Khan, M. ; Saunier, P.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
In this paper, we report state of the art CW power results of 0.25-/spl mu/m gate length AlGaN/GaN HEMTs at both 30 and 35 GHz. At a drain bias of 30V, the 200/spl mu/m gate width devices showed a record power density of 4.13 W/mm with 23% of power added efficiency (PAE) and 5.5 dB of associated gain at 35 GHz, which represent the best power density and efficiency achieved by a solid-state devices at this frequency.
Keywords :
MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; power HEMT; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; 0.25 micron; 200 micron; 30 GHz; 30 V; 35 GHz; 5.5 dB; AlGaN-GaN; AlGaN/GaN HEMTs; Ka-band continous wave power; PAE; SiC; SiC substrate; drain bias; power added efficiency; record power density; solid-state devices; Aluminum gallium nitride; Current measurement; Gain; Gallium nitride; HEMTs; MODFETs; Power generation; Satellite communication; Silicon carbide; Solid state circuits;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226851
