Title :
P-channel InGaN-HFET structure based on polarization doping
Author :
Zimmermann, T. ; Neuburger, M. ; Kunze, M. ; Daumiller, I. ; Denisenko, A. ; Dadgar, A. ; Krost, A. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
In this paper, a 2DHG is developed at the lower InGaN/GaN interface with the countercharge supplied by surface acceptors. The position of the 2DHG is verified by CV- profiling. Hall measurements at 66K indicate a high hole mobility of 700 cm/sup 2//Vs. The channel is already activated at 20K confirming indeed the presence of a 2DHG.
Keywords :
Hall effect; band structure; field effect transistors; gallium compounds; hole mobility; impurity states; indium compounds; semiconductor heterojunctions; voltammetry (chemical analysis); wide band gap semiconductors; 20 K; 66 K; CV- profiling; Hall measurements; InGaN-GaN; InGaN/GaN interface; P-channel InGaN-HFET structure; countercharge; hole mobility; polarization doping; surface acceptors; Aluminum gallium nitride; Capacitive sensors; Circuits; Current density; Electron devices; Epitaxial growth; Gallium nitride; Optical polarization; Physics; Semiconductor device doping;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226852
