Observation of antibound biexciton states in a single ZnSe quantum well

Author

Zhou, Huimin ; Nurmikko, A.V. ; Chu, Chia-Chi ; Han, Jinguang ; Chen, Wei-Ling ; Gunshor, R.L.

Author_Institution

Div. of Eng., Brown Univ., Providence, RI, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

212

Lastpage

213

Abstract

Summary form only given.We show evidence for the experimental observation of antibound excitonic molecular states. The samples were grown as a ZnSe-ZnSSe-ZnMgSSe separate confinement heterostructure, including the single 75-A-thick QW. Transmission measurements at T=10 K showed a QW exciton with peak value of the absorption coefficient, and a linewidth of 0.5 meV. Spectrally resolved, time-integrated four wave mixing (FWM) experiments were performed in a degenerate two-beam geometry.

Keywords

II-VI semiconductors; absorption coefficients; biexcitons; multiwave mixing; semiconductor quantum wells; zinc compounds; 10 K; QW exciton; ZnSe-ZnSSe-ZnMgSSe; ZnSe-ZnSSe-ZnMgSSe separate confinement heterostructure; absorption coefficient; antibound biexciton states; antibound excitonic molecular states; degenerate two-beam geometry; linewidth; peak value; single ZnSe quantum well; time-integrated four wave mixing; transmission measurements; Azimuthal angle; Delay; Excitons; Laser excitation; Optical coupling; Optical interferometry; Optical pumping; Optimized production technology; Quantum well devices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680451

Filename

680451