• DocumentCode
    1979888
  • Title

    Microwave performance of diamond surface-channel FET

  • Author

    Kasu, Makoto ; Kubovic, M. ; Aleksov, A. ; Kallfass, I. ; Spitzberg, U. ; Kobayashi, N. ; Schumacher, H. ; Kohn, E.

  • Author_Institution
    Dept. of Electron Devices and Circuits, Ulm Univ., Germany
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    21
  • Lastpage
    22
  • Abstract
    In this paper, the microwave characteristics of diamond FETs with 0.2/spl mu/m gate length (L/sub G/) are discussed.
  • Keywords
    diamond; elemental semiconductors; field effect transistors; microwave measurement; noise measurement; 0.2 micron; diamond surface-channel FET; microwave noise measurements; microwave properties; Circuits; Cutoff frequency; Electric breakdown; Electron devices; Laboratories; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226853
  • Filename
    1226853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979888