• DocumentCode
    1979893
  • Title

    A 60 GHz dual-mode power amplifier with 17.4 dBm output power and 29.3% PAE in 40-nm CMOS

  • Author

    Zhao, Dixian ; Kulkarni, Shailesh ; Reynaert, Patrick

  • Author_Institution
    ESAT-MICAS, Katholieke Univ. Leuven, Leuven, Belgium
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    A 60 GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology. The PA consists of two unit PAs with a transformer-based power combiner at the output. To reduce the power consumption and hence extend battery life time, one unit PA is tuned off in low-power mode. A switch is employed to short the output of this off-state unit PA and thus improves the back-off efficiency. The PA achieves a saturated output power (PSAT) of 17.4 dBm with 29.3% PAE in high-power mode and a PSAT of 12.6 dBm with 19.6% PAE in low-power mode. The PA with the power combiner only consumes an active area of 0.074 mm2. The reliability measurements are also performed and the PA has an estimated lifetime of 80613 hours.
  • Keywords
    CMOS integrated circuits; low-power electronics; power amplifiers; power combiners; power consumption; reliability; PAE; battery life time; bulk CMOS technology; dual-mode power amplifier; frequency 60 GHz; low-power mode; power consumption; reliability measurements; saturated output power; size 40 nm; transformer-based power combiner; CMOS integrated circuits; CMOS technology; Gain; Power amplifiers; Power generation; Reliability; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2012 Proceedings of the
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4673-2212-6
  • Electronic_ISBN
    1930-8833
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2012.6341323
  • Filename
    6341323